Essays about: "ALD"

Showing result 1 - 5 of 39 essays containing the word ALD.

  1. 1. (1,3-di-tert-butyltriazenide) Cu(I) as vapor deposition precursor

    University essay from Linköpings universitet/Kemi

    Author : Peggy Bagherzadeh; [2023]
    Keywords : Vapor deposition; CVD; ALD; triazenide;

    Abstract : In the past few decades, devices such as computers have become smaller, and their performance has improved beyond comparison. Semiconductors and interconnectors are used in almost all devices today and are made of thin films. READ MORE

  3. 2. SFEER Hydrogen Permeation : Finding a suitable coating for the PA6 liner

    University essay from Uppsala universitet/Institutionen för materialvetenskap

    Author : Elsa Friis; Klara Karlsson; Rebecka Damgren; Emma Åkesson; Malin Johansson; [2023]
    Keywords : Hydrogen permeation; PA6; coating; hydrogen permeation barrier; polymer hydrogen permeation; permeation; protective coating; hydrogen embrittlement;

    Abstract : Water Stuff & Sun are developing a hydrogen battery based on a technology called SFEER’s. The SFEER’s are spherical high-pressure gas storage containers that are the size of a tennis ball. They consist of a carbon fiber-shell that is lined on the inside with a polymer called PA6. READ MORE

  4. 3. Flashlamp Annealing for Improved Ferroelectric Junctions

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Theodor Blom; [2023]
    Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

  5. 4. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Erik Wikare; [2022]
    Keywords : Technology and Engineering;

    Abstract : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. READ MORE

  6. 5. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Author : Björn Landeke-Wilsmark; [2022]
    Keywords : Physics and Astronomy;

    Abstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE