Essays about: "ALD"
Showing result 1 - 5 of 39 essays containing the word ALD.
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1. (1,3-di-tert-butyltriazenide) Cu(I) as vapor deposition precursor
University essay from Linköpings universitet/KemiAbstract : In the past few decades, devices such as computers have become smaller, and their performance has improved beyond comparison. Semiconductors and interconnectors are used in almost all devices today and are made of thin films. READ MORE
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2. SFEER Hydrogen Permeation : Finding a suitable coating for the PA6 liner
University essay from Uppsala universitet/Institutionen för materialvetenskapAbstract : Water Stuff & Sun are developing a hydrogen battery based on a technology called SFEER’s. The SFEER’s are spherical high-pressure gas storage containers that are the size of a tennis ball. They consist of a carbon fiber-shell that is lined on the inside with a polymer called PA6. READ MORE
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3. Flashlamp Annealing for Improved Ferroelectric Junctions
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE
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4. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. READ MORE
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5. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds
University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysikAbstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE