Essays about: "Ferroelectric memory"

Showing result 1 - 5 of 10 essays containing the words Ferroelectric memory.

1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Elliot Winsnes; [2024]
   Keywords : HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

   Abstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE

3. 2. Evaluation of Ferroelectric Tunnel Junction memristor for in-memory computation in real world use cases

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Alec Guerin; Christos Papadopoulos; [2023]
   Keywords : FTJ; Ferroelectric Tunneling Junction; Analog in-memory computing; AIMC; Memristor; A.I.; AIHWKIT; Semantic segmentation; Natural Language Processing; NLP; Neuromorphic Computing; Matrix Vector Multiplication; Technology and Engineering;

   Abstract : Machine learning algorithms are experiencing unprecedented attention, but their inherent computational complexity leads to high energy consumption. However, a paradigm shift in computing methods has the potential to address the issue. READ MORE

4. 3. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Erik Wikare; [2022]
   Keywords : Technology and Engineering;

   Abstract : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. READ MORE

5. 4. Laminated HZO on InAs: A study of as-deposited ferroelectricity

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : André Andersen; [2022]
   Keywords : Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

   Abstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE

6. 5. Simulations of current transport phenomena in ferroelectric tunnel junctions

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Ivan Lubar; [2022]
   Keywords : Technology and Engineering;

   Abstract : Ferroelectric memories pose as a potential candidate as resistive memory devices that could be used for in-memory computing and artificial synapses. One promising type of ferroelectric memory device is the ferroelectric tunnel junction (FTJ). READ MORE