Essays about: "Hf0.5Zr0.5O2"

Found 2 essays containing the word Hf0.5Zr0.5O2.

  1. 1. Ferroelectric Gate-Stack on InAs

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Pontus Littow; [2019]
    Keywords : Physics and Astronomy;

    Abstract : Modern electronics are becoming more powerful and energy efficient for every new process generation. A key component in electronics is the transistor, which has made this trend possible. For many years the transistor has simply been scaled down.However, that is not possible any longer. READ MORE

  3. 2. Ferroelectricity in nanocrystalline Hf0.5Zr0.5O2 thin films

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Lun Sang; [2018]
    Keywords : ferroelectricity; Hf0.5Zr0.5O2; GIXRD; XRR; Technology and Engineering; Physics and Astronomy;

    Abstract : Hafnium dioxide (HfO_2) based thin films doped with various dopants (Si, Ge, Al, Gd, Sr, Zr) have been found to exhibit ferroelectricity. These dopants were found to stabilize the III orthorhombic phase in the hafnium oxide based thin films. READ MORE