Essays about: "III-V compound semiconductor"

Showing result 1 - 5 of 9 essays containing the words III-V compound semiconductor.

1. 1. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

   University essay from KTH/Tillämpad fysik

   Author : Elaheh Aghajafari; [2023]
   Keywords : III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

   Abstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE

3. 2. AlP sacrificial layer for GaP NW growth

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Patrick Flatt; [2020]
   Keywords : Nanowire; Substrate Reuse; Sacrificial Layer; Epitaxy; Wafer; MOVPE; Etching; GaP; AlP; SiN; Au; SEM; Physics and Astronomy;

   Abstract : III-V semiconductor nanowires (NWs) display outstanding potential for many technological applications, but their implementation into devices is restricted due to high material and fabrication costs. Common techniques for NW synthesis rely on single crystalline substrates, which are single-use and have large costs associated to them. READ MORE

4. 3. Properties of III-V/Si heterojunction fabricated by HVPE

   University essay from KTH/Tillämpad fysik

   Author : Prakhar Bhargava; [2020]
   Keywords : ;

   Abstract : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. READ MORE

5. 4. InAs MOS capacitors;Fabrication & Characterization

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Author : Felix Vennberg; [2016]
   Keywords : Physics and Astronomy;

   Abstract : The down scaling of metal-oxide-semiconductor based devices has been halted by the shortcomings of silicon. To enable further miniaturization new materials are required. The proposed replacements include compound III-V semiconductors and high-k oxides, the implementation of which has been difficult. READ MORE

6. 5. Vertical heterostructure III-V nanowire MOSFETs

   University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

   Author : Adam Jönsson; [2016]
   Keywords : MOSFET; transistor; heterostructure; III-V; RF; semiconductor; silicon; fabrication; electronics; Technology and Engineering;

   Abstract : If cars had developed as fast as processors they would go at 470,000 mph, get 100,000 miles to the gallon, and cost 3 cents" claims Paul Ottelini, Intel CEO 2005-2013. This serves as a reminder of how fast the field of nanoelectronics is developing due to constant demand for faster and more energy efficient integrated circuits. READ MORE