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1. Simulation and analysis of InP/GaInP nanowire Esaki diodes for photovoltaic device applications
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : In this thesis the WKB-approximation is used to simulate the tunneling current for an Esaki nanowire diode and the result is compared to data from Esaki nanowire diodes grown with MOVPE. The WKB-approximation with triangular potential barrier predicts a strong increase of the tunneling current as a function of the doping densities and at the highest doping levels it gives lower tunneling distances than more reliable drift-diffusion simulations and is thus overestimating the current. READ MORE
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