Essays about: "Quantum size effects"
Showing result 1 - 5 of 15 essays containing the words Quantum size effects.
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1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. READ MORE
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2. Quantum signatures in the work fluctuation-dissipation relation protocol
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Matematisk fysikAbstract : Quantum thermodynamics deals with the behavior of thermal machines that operate in the quantum regime, where coherences and entanglement can have a significant impact. However, detecting such quantum effects in thermal machines can be challenging, as they are primarily manifested as fluctuations. READ MORE
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3. Temperature Dependent Electrical Characterisation of Vertical InAs-InGaAs Nanowire MOSFETs
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis presents the temperature dependence of InGaAs Nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) grown at two different temperatures. The two different growths represent one sample having nanowires which have a mixed crystal structure (showing stacking faults) and one sample with nanowires of pure crystal structure (without stacking faults). READ MORE
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4. Optical characterisation of AAO/CsPbBr3 perovskite nanocomposites
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Direct bandgap metal lead halide perovskites offer promising optoelectronic properties desirable in a wide range of applications including photodetection. However, the incomplete and poor understanding of the photophysical processes taking place in these materials, along with their poor stability, is the bottleneck for optimisation and further development of metal halide perovskite devices. READ MORE
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5. Investigation of Resistive Random Access Memory for 1T1R Nanowire Array Integration
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : As modern electronics have started to reach its physical scaling limits, novel architectures and physics is needed to meet future demands. Oxide-based Resistive Random Access Memory (RRAM) is a new emerging technology that uses filament formation and rupture in thin oxides to generate resistive switching. READ MORE