Essays about: "Wurtzite"
Showing result 1 - 5 of 13 essays containing the word Wurtzite.
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1. In-situ Growth of Sn-seeded GaAs and GaSb Nanowire Heterostructures
University essay from Lunds universitet/Centrum för analys och syntesAbstract : One of the ways to utilize III-V nanowires, is to make use of the possibility to combine materials and create heterostructures which allows for creating material combinations with new properties. A special interest can be taken into Sb-containing nanowires due to the high electron mobility, however there has been reported difficulties with switching to other materials because of a 'memory effect' where Sb lingers in the system and nanowire. READ MORE
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2. Establishing simulations of shockwaves in InSb using molecular dynamics
University essay from Lunds universitet/Atomfysik; Lunds universitet/Fysiska institutionenAbstract : Laser induced shockwaves have previously been shown to prompt structural changes in germanium. Similar experiments have now been performed in InSb, with powder diffraction patterns displaying a peak at 2.3Å indicating the formation of an unknown structure. READ MORE
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3. Femtosecond Photoemission Electron Microscopy of Indium Arsenide Nanowires
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : PhotoEmission Electron Microscopy (PEEM) has proven to be a successful method for examining the electronic characteristics of nanostructures. The experiments relevant for the following report were conducted using a combination of PEEM and a femtosecond pulsed laser to determine the electrical characteristics of Indium Arsenide nanowire of crystal structure varying between wurtzite and zinc blend. READ MORE
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4. Interfaces in complex InAs-GaSb heterostructured nanowires - A transmission electron microscopy study
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : In this project epitaxially grown InAs-GaSb complex heterostructured nanowires have been characterized by means of aberration corrected TEM techniques and energy dispersive X-ray spectroscopy (EDX). The InAs-GaSb material is of interest due to its high charge carrier mobility, which has possible applications in electronic devices such as FETs. READ MORE
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5. Electrical characterization of strained InP-Ga(x)In(1-x)As core-shell nanowires
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : This project report attempts to measure the piezoelectric effect in strained core-shell nanowires. The core material is wurtzite indium phosphide (InP) and the shell material wurtzite gallium indium arsenide (Ga(x)In(1-x)As). READ MORE