Essays about: "silicon carbide growth"

Showing result 1 - 5 of 6 essays containing the words silicon carbide growth.

  1. 1. Doped 3C-SiC Towards Solar Cell Applications

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Mattias Jons; [2018]
    Keywords : Silicon carbide; 3C-SiC; sublimation epitaxy; ohmic contact; photovoltaic; solar cell;

    Abstract : The market for renewable energy sources, and solar cells in particular is growing year by year, as a result there is a large interest in research on new materials and new technologies for solar power applications. In this thesis the photovoltaic properties of cubic silicon carbide (3C-SiC) has been investigated. READ MORE

  2. 2. The influence of growth temperature on CVD grown graphene on SiC

    University essay from Linköpings universitet/Halvledarmaterial; Linköpings universitet/Tekniska fakulteten

    Author : Andréa Nicollet; [2015]
    Keywords : CVD; graphene; SiC; Raman spectroscopy; AFM; reflectance mapping;

    Abstract : Graphene is one of the most popular material due to its promising properties, for instance electronics applications. Graphene films were grown on silicon carbide (SiC) substrate using chemical vapor deposition (CVD). Influence of the deposition temperature on the morphology of the films was investigated. READ MORE

  3. 3. Epitaxial and bulk growth of cubic silicon carbide on off-oriented 4H-silicon carbide substrates

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Olof Norén; [2015]
    Keywords : Silicon carbide; Cubic silicon carbide; 3C-SiC; Bulk; Sublimation epitaxy; Seeded sublimation growth;

    Abstract : The growth of bulk cubic silicon carbide has for a long time seemed to be something for the future. However, in this thesis the initial steps towards bulk cubic silicon carbide have been taken. READ MORE

  4. 4. Optical properties of free-standing cubic silicon carbide

    University essay from Linköpings universitet/Halvledarmaterial; Linköpings universitet/Tekniska fakulteten

    Author : Mattias Jansson; [2015]
    Keywords : semiconductor; silicon carbide; SiC; photovoltaic; water splitting; sublimation;

    Abstract : The properties of free-standing cubic silicon carbide for optoelectronic applications are explored in this work. The main focus of the work is on boron doped cubic silicon carbide, which is proposed as a highly useful material in several optoelectronic applications. READ MORE

  5. 5. Characterization of epitaxial graphene grown on silicon carbide

    University essay from Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik

    Author : Anton Jansson; [2014]
    Keywords : Graphene; epitaxial graphene; silicon carbide; SiC; 4H-SiC; 6H-SiC; sublimation; graphene manufacturing; AFM; atomic force microscopy; tapping mode; surface study; stepheight; charactarization;

    Abstract : In this thesis work several manufacturing methods for graphene is discussed followed by an indepth study of graphene grown by a high temperature sublimation method (sublimation of siliconcarbide). The graphene surfaces studied have been grown by Graphensic AB, both graphenegrown on the Si-face and the C-face of the silicon carbide were studied. READ MORE