Time-Resolved Photoluminescence Studies of InGaP Nanowires for Improving the Internal Quantum Efficiency

Abstract: Semiconductor Nanowires are promising building blocks for advanced optoelectronic devices since their small diameter give rise to quantization effects. The small diameter also makes them susceptible to non-radiative recombination due to surface states. A consequence of non-radiative surface recombination is a reduction of a total recombination lifetime. This is in turn limits an internal quantum efficiency (IQE) of optoelectronic devices because the IQE is defined as a ratio between the radiative recombination lifetime and the total recombination lifetime. It is therefore important to produce the nanowires with as long total lifetime as possible in order to achieve a significant IQE. This thesis aims to improve the IQE of the nanowires by using the surface passivating layer with a larger bandgap material on ternary alloy (InGaP) nanowires. The larger bandgap of the passivating layer will allocate the charge carriers into the center nanowire which, therefore, decrease the chance of the recombination at the surface. The passivating layer covers the side facet of the nanowires as a shell. The nanowires with this shell layer are called core-shell nanowires. Photoluminescence (PL) spectroscopy was used to evaluate the material composition and the bandgap of the core nanowire as well as the shell layer. Various compositions of shell materials give different band offsets between the core and the shell. Time-resolved photoluminescence (TRPL) was performed on the nanowires with and without the shell to measure the recombination lifetime. Finally, the energy structure of the non-radiative recombination center was studied by a temperature dependent PL (TDPL) and a power dependent TRPL. For the plain nanowires, the result shows that the non-radiative recombination is indeed related to surface states as expected. The total lifetime of the thinner wires is shorter than the thicker wires. Therefore, the IQE will degrade for the devices based on the thin nanowires. The TDPL reveals that the intensity is two orders of magnitude lower at room temperature (300 K) compared with the lowest measured temperature (4 K). The decreasing intensity is a result of two quenching processes. As the temperature increases, charge carriers gain higher thermal energies. The first quenching process occurs as the charge carriers escape the potential confinement with their higher thermal energies. Another process corresponds to a non-radiative recombination center with an activation energy of 17 meV. Power dependent TRPL at low (5 K) and high (100 K) temperature confirmed that the non-radiative recombination center is thermally activated.