Modelling Rapid Melt Growth of III-V Integration on Si

Abstract: High quality III-V semiconductors on silicon substrate can make for significant progress in gate electrostatics and optoelectronic devices. Indium antimonide with its inviting properties can play a key role to further facilitate devise integration. But the question is, is it possible to obtain high quality III-V semiconductors on low cost silicon and still be able to manufacture it at large scale? The answer is yes! With the technique "Rapid Melt Growth" defect free lattice mismatch materials can be produced on large scale. The resulting material is free of crystallographic defects and is high in purity. To be able to use rapid melt growth to produce high quality single crystalline material, the thermodynamic parameters for nucleation and growth velocity needs to be known. The problem arises when these parameters cannot readily be found in literature and require long term experiments. In this thesis, the thermodynamic parameters are found from relevant equations and assumptions based on literature. Using these parameters, a temperature window of 108 K was found, which is large enough and hence leads to long epitaxial length before random nucleation dominates. This length was found to be 2.61 mm, which is good enough for most device fabrication. The results can be applied for materials having similar properties to Indium antimonide. Nonetheless changing some of the parameters further improved the results for nucleation and growth i.e. in the future those parameters need to be reconsidered.