An investigation into Plasma Vapor Deposition Aided Chemical Vapor Deposition : A PVD aided CVD process for depositing Nitrogenatoms mixed in Carbon Diamond-Like-Structure is investigated and one such layer is formed with this method

University essay from KTH/Industriell produktion

Author: Qilin Fu; [2010]

Keywords: ;

Abstract: The work presented in this master thesis includes experiments and analysis of the Physical Vapor Deposition aided Chemical Vapor deposition. Physical Vapor Deposition is usually deemed as a process of applying plasma phenomenon in highvacuum situation, knocking off the cathode material like particles or atoms, and depositing the knocked off particles onto a substrate surface.  Chemical Vapor Deposition process is usually referred to as a process of vaporizing liquid materials into the process chamber and reacting with other substances and forming solid particles. This kind of particles can be deposited onto a substrate surface and forming a coating layer. The by-productsare usually removed with the gas flow in the chamber. In order to assist the chemical reaction process, high temperature on the substrate is usually utilized. It is common knowledge to notice that under high temperature, the crystallographic structure of the substrate might change and result in negative damages. A combined method of using PVD phenomenon to assist the CVD process has been studied in this work and it shows a new trend in the method of coating process. As a result, a layer of nitrogen atoms mixed in Carbon Diamond-Like-Structures has been formedon the substrate surface.

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