Numerical Simulations of Resonant Tunnelling Diodes

Abstract: In this thesis, four different numerical techniques are implemented for the purpose of simulating resonant tunnelling diodes (RTDs). The chosen methods were: piecewise constant transfer matrix (TMM-C), piecewise linear transfer matrix (TMM-L), quantum transmitting boundary method (QTBM), and the Crank-Nicolson method (CN). The numerical methods converged compared with the known analytic simulation for plane waves tunnelling through a single barrier. To better represent the semiconductor-based RTDs, the effective mass approximation was adopted with accompanying modifications to the Hamiltonian operators to ensure the continuity of the wave function and its derivative. Using the Tsu-Esaki formula, the current density was calculated as a function of bias voltage for two different RTD devices. The numerically obtained current density was of the same order of magnitude as referenced experimental values but differed significantly enough to require better models if engineering applications are decided. The models in this thesis were able to display resonant tunnelling and a negative differential resistance (NDR), giving them plausible educational value.