Properties of III-V semiconductor materials grown by HVPE

Abstract: This thesis focuses on the characterization of lll-V semiconductor materials by using Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS), High Resolution X-ray Diffraction (HRXRD), Atomic Force Microscopy (AFM) and Photoluminescence (PL). In XRD characterization, the rocking curve measurement was conducted to evaluate the composition of III-V semiconductor alloys and the Reciprocal Lattice Mapping (RLM) revealed the detailed structural properties of heteroepitaxial III-V semiconductors. The lll-V heterostructure comprising gallium indium phosphide (GaInP) deposited on gallium arsenide (GaAs) substrates was studied by Hydride Vapor Phase Epitaxy (HVPE) using different growth parameters. The growth of gallium indium phosphide/silicon heterostructure was also investigated. Qualitative and semi-quantitative analyses have been conducted to evaluate the obtained results. The morphology, the composition as well as the distribution of the atomic elements (Ga,In,P) in the lll-V heterostructures were investigated as function of different HVPE growth parameters. The observation of silicon intermixing in the III-V semiconductor close to the III-V/Si interface and the depletion of gallium composition in the GaInP growth along the specific crystallographic orientation were also studied. The outcomes of this project pave the way for the GaInP composition optimization in HVPE. The primary objective of the project to establish a productive characterization approach for analyzing the properties of lll-V heterostructures is achieved.