Essays about: "4h-SiC"

Showing result 1 - 5 of 12 essays containing the word 4h-SiC.

  1. 1. Processing and characterization of self-aligned Ni/Al and Co ohmic contacts to 4H-SiC

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Andrea Ferrario; [2018]
    Keywords : ;

    Abstract : New self-aligned silicide processes for the realization of Ni/Al and Co contacts to silicon carbide (4H-SiC) are presented and contacts are characterized using the transfer length method (TLM). Since cobalt silicide formation on 4H-SiC has not been investigated before, interface reaction between Co and 4H-SiC as well as the study on the annealing temperatures constitute an essential part of this work. READ MORE

  2. 2. Fabrication and Characterization of 4H-SiC MOS Capacitors with Different Dielectric Layer Treatments

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Otkur Wutikuer; [2018]
    Keywords : 4H-SiC; MOS capacitor; Dielectric layer; PECVD; C-V measurement; Interface states.;

    Abstract : 4H-SiC based Metal-Oxide Semiconductor(MOS) capacitors are promising key components for next generation power devices. For high frequency power applications, however, there is a major drawback of this type of devices, i.e. READ MORE

  3. 3. Characterization and Modeling of SiC Integrated Circuits for Harsh Environment

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Daiki Kimoto; [2017]
    Keywords : Silicon carbide; Harsh environment; High-temperature; Pseudo-CMOS; SPICE circuit simulation; Yield calculation; Silicon carbide; Extrema Miljöer; Hög tempeatur; Pseudo-CMOS; SPICE kretssimulering; Utbytet uträkning;

    Abstract : Elektronik för extrema miljöer, som kan användas vid hög temperatur, hög strålning och omgivning med frätande gaser, har varit starkt önskvärd vid utforskning av rymden och övervakning av kärnreaktorer. Kiselkarbid (SiC) är en av kandidaterna inom material för extrema miljöer på grund av sin höga temperatur- och höga strålnings-tolerans. READ MORE

  4. 4. Characterization of epitaxial graphene grown on silicon carbide

    University essay from Karlstads universitet/Institutionen för ingenjörsvetenskap och fysik

    Author : Anton Jansson; [2014]
    Keywords : Graphene; epitaxial graphene; silicon carbide; SiC; 4H-SiC; 6H-SiC; sublimation; graphene manufacturing; AFM; atomic force microscopy; tapping mode; surface study; stepheight; charactarization;

    Abstract : In this thesis work several manufacturing methods for graphene is discussed followed by an indepth study of graphene grown by a high temperature sublimation method (sublimation of siliconcarbide). The graphene surfaces studied have been grown by Graphensic AB, both graphenegrown on the Si-face and the C-face of the silicon carbide were studied. READ MORE

  5. 5. Design considerations for a high temperature image sensor in 4H-SiC

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Marco Cristiano; [2014]
    Keywords : ;

    Abstract : This thesis is part of a project, Working on Venus, funded by the Knut and Alice Wallenberg Foundation (one of the largest Swedish funders of research) and developed by KTH in collaboration with Linkӧping University. The goal of this project is to create a lander able to investigate the planet Venus and to work under extreme conditions, i.e. READ MORE