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Showing result 1 - 5 of 16 essays matching the above criteria.
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1. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE
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2. Symmetry Analysis of Orbitals in a Plane Wave Basis : A Study on Molecules and Defects in Solids
University essay from Linköpings universitet/Teoretisk FysikAbstract : Modeling and analysing materials with theoretical tools is of great use when finding new systems for applications, for example, semiconductors with point defects can be used for quantum applications, like single photon emitters. One important aspect to consider symmetry, which can yield useful information about the properties of a system. READ MORE
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3. Numerical Simulation of 3.3 kV–10 kV Silicon Carbide Super Junction-MOSFETs for High Power Electronic Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : The thesis focuses on designing and characterizing SiC 3.3 kV Diffused Metal-Oxide Semiconductor Field-Effect Transistor (DMOSFET)s with a Ron that is significantly lower than that of current commercial devices. The On-state resistance and breakdown voltage are then adjusted by adding a Super-Junction structure. READ MORE
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4. Gate oxide characterization of 4H-SiC MOS capacitors : A study of the effects of electrical stress on the flat-band voltage of n-type substrate 4H-SiC MOS capacitors
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon is the main material used in electronics. The evolution of power electronics and the need for more power efficient semiconductor devices led silicon to its limits. Silicon carbide is a promising material for electronic applications with a wide band-gap, high critical electric field, high thermal conductivity and saturation velocity. READ MORE
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5. Processing and characterization of self-aligned Ni/Al and Co ohmic contacts to 4H-SiC
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : New self-aligned silicide processes for the realization of Ni/Al and Co contacts to silicon carbide (4H-SiC) are presented and contacts are characterized using the transfer length method (TLM). Since cobalt silicide formation on 4H-SiC has not been investigated before, interface reaction between Co and 4H-SiC as well as the study on the annealing temperatures constitute an essential part of this work. READ MORE
