Essays about: "4h-SiC"
Showing result 11 - 15 of 16 essays containing the word 4h-SiC.
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11. Optical studies of surface recombination velocity in 4H-SiC epitaxial layer
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : In this work optical studies of the effect of surface passivation for surface recombination velocity at the interface between 4H-SiC epitaxial layer and various passivation layers are presented. Four samples have been used consisting of three main parts: thin film oxide layer, 4H-SiC epitaxial layer and 4H-SiC substrate. READ MORE
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12. Fabrication and Characterization of Micro and Nano Scale SiC UV Photodetectors
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : The focus of this master thesis work is on the fabrication of micro- and nano-scale metalsemiconductor-metal silicon carbide (SiC) UV photodetectors and subsequent electrical and optical evaluation of the fabricated devices. The UV photodetectors have significant potential to address the needs of many applications such as detection of corona discharge and flames, industrial machine viewing, and bacteria in water or paper mills. READ MORE
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13. Time Resolved Micro Photoluminescence of InGaN/GaN Quantum Dots
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : Time resolved micro photoluminescence of InGaN/GaN quantum dots has been investigated, together with power dependence and polarization measurements. The quantum dots are formed at the top of selectively grown GaN pyramids on a 4H-SiC substrate. Decay time constants in the range of 400 ps to 1. READ MORE
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14. A comparison of free carrier absorption and capacitance voltage methods for interface traps measurements
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : This project aims at establishing a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on metal-oxide-semiconductor (MOS) test structures. READ MORE
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15. Tailored Al2O3/4H-SiC interface using ion implantation
University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)Abstract : The effects of ion implantation of Al2O3interface to 4H-SiC epitaxial n- and p-type layers are presented. Different fluencies of carbon and nitrogen ions are used, as well as different annealing processes, with the aim to study the effects of implanted ions at the Al2O3/SiC interface. READ MORE