Essays about: "Al2O3"
Showing result 6 - 10 of 74 essays containing the word Al2O3.
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6. Chelating agents in NiMo sulfided catalysts and the effect of nitrogen compounds on hydrodearomatization and hydrodenitrogenation reactions
University essay from KTH/KemiteknikAbstract : Hydrering är en viktig process för att producera produkter med önskade egenskaper samt att uppfylla de lagliga krav som existerar med avseende på miljö och hälsa. Reaktionerna som sker vid hydreringen är katalytiska vilket innebär att förstå sam utnyttja de mest lämpliga katalysatorerna är av yttersta vikt. READ MORE
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7. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE
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8. Characterisation of additively manufactured Inconel 718 alloy by using electrolytic extraction
University essay from KTH/MaterialvetenskapAbstract : The formation of non-metallic inclusions (NMIs) are common in all steel grades and it is not possible as of today to be able to remove all of them. The inclusions are categorised into endogenous (oxides, nitrides, sulfides, carbides, and phosphides), and exogenous (entrapment of nonmetals: slag, mold). READ MORE
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9. Magnetron Sputter Epitaxy of High-quality GaNand Plasma Characterization of the Process : Degree Project–Master’s Thesis
University essay from Linköpings universitet/TunnfilmsfysikAbstract : Several sputtering depositions were done by direct current (DC) magnetron sputtering epitaxy (MSE) techniquefor the goal of improving the growth rate and crystalline quality of GaN thin film on Al2O3 substrate. Thegrowth rate was higher when substrate-to-target distance D = 7 cm compared with D = 9. READ MORE
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10. Investigating and Fabricating High-K (Al2O3) and Ferroelectric (HfO2) MIM-Capacitors for use in BEOL Fabrication Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Integration of high-K Metal-Insulator-Metal (MIM) capacitors in the Back-end-of-line (BEOL) is a topic of interest for the further development of the process at KTH Royal Institute of Technology. MIM-capacitors benefit from having constant capacitance values over a range of voltages and/or frequencies. READ MORE