Essays about: "Anneal"
Showing result 1 - 5 of 11 essays containing the word Anneal.
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1. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds
University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysikAbstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE
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2. Laminated HZO on InAs: A study of as-deposited ferroelectricity
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE
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3. Investigation of Methods to Improve PZT Sol-Gel Deposition Process for Energy Harvesting Applications
University essay from KTH/Hälsoinformatik och logistikAbstract : The purpose of this work was to investigate ways to modify Silex sol-gel deposition of PZT (PbZrxTi(1-x)O3, Lead Zirconate Titanate) in order to improve its properties for energy harvesting applications. A number of methods to improve the figure of merit for energy harvesting (FOM= e312/ε), cause self-polarization, increase lifetime, reduce cost, increase throughput or simplify processing were tested. READ MORE
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4. Study of ohmic contact formation on AlGaN/GaN heterostructures
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. READ MORE
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5. Processing and characterization of self-aligned Ni/Al and Co ohmic contacts to 4H-SiC
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : New self-aligned silicide processes for the realization of Ni/Al and Co contacts to silicon carbide (4H-SiC) are presented and contacts are characterized using the transfer length method (TLM). Since cobalt silicide formation on 4H-SiC has not been investigated before, interface reaction between Co and 4H-SiC as well as the study on the annealing temperatures constitute an essential part of this work. READ MORE