Essays about: "Atomic Layer Etching"
Found 5 essays containing the words Atomic Layer Etching.
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1. Real- and Quasi-Atomic Layer Etching for Ultra-High Resolution Patterning
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : An attempt was made at developing atomic layer etching from a cyclic etching process in an ICP-RIE tool. During the process OES was used for contamination monitoring and estimation of the relative amount of Cl2 left in the chamber during the etch step of cyclic etching processes. READ MORE
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2. Damage Analysis of Reactive Ion and Atomic Layer Etched Silicon
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Dry etching is one of the most important methods of pattern transfer in nanofabrication. There are many dry etching methods, the most commonly used is reactive ion etching (RIE), that is based on a continuous supply of reactive ions and radicals generated in a radio-frequency (RF) plasma discharge. READ MORE
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3. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds
University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysikAbstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE
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4. Study of ohmic contact formation on AlGaN/GaN heterostructures
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. READ MORE
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5. Evaluation of Atomic Layer Etching Possibility at Lund Nano Lab
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : In modern electronics, device downscaling demands atomic precision control and Atomic Layer Etching (ALE) can provide this prime capability with minute device damage. ALE, also known as layer-by-layer etching, is a technique of removing atomically thin layers from the surface of materials in a controlled way. READ MORE
