Essays about: "BANDGAP"
Showing result 1 - 5 of 62 essays containing the word BANDGAP.
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1. Establishing High-Temperature Models for Leakage Current in Gated Lateral Bipolar Junction Transistors
University essay from Luleå tekniska universitet/Institutionen för teknikvetenskap och matematikAbstract : Power-efficient circuits are a vital step in moving towards a greener future. Battery life can get substantially improved by decreasing the amount of power a circuit needs. Lower power also leads to less excess heat generated. READ MORE
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2. FPGA Based Control of Multiple Electric Machines for Marine Propulsion Systems
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : This master thesis addresses the control of electric propulsion motors in a marine context. The focus lies mainly on the implementation of field oriented control (FOC) in a field programmable gate array (FPGA). The hypothesis is that FPGAs provide performance advantages over microcontroller-based control solutions by enabling parallel processing. READ MORE
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3. In-Situ Investigation of Particle Assisted GaSb Nucleation Using Environmental TEM
University essay from Lunds universitet/Centrum för analys och syntesAbstract : III-V semiconductor material based nanowires have been extensively studied and shown to be a very exciting building block for future electronics. Material systems such as GaSb show a lot of promise in optoelectric and thermoelectric generation applications because of its high electron mobility and small bandgap. READ MORE
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4. Tuning Photovoltaic Properties of Two-dimensional Molybdenum Disulfide by Alloying: An ab initio study
University essay from KTH/MaterialvetenskapAbstract : Addressing the urgent need for innovative energy solutions amidst increasing environmental concerns, the focus on photovoltaic solar cells is intensifying. Currently limited by the Shockley-Queisser limit, conventional silicon-based solar cells offer a maximum power conversion efficiency of 32%. READ MORE
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5. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE