Essays about: "BiCMOS"

Found 5 essays containing the word BiCMOS.

  1. 1. Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Carmine Cappetta; [2014]
    Keywords : ;

    Abstract : Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. READ MORE

  3. 2. Low Temperature Epitaxy Growth and Kinetic Modeling of SiGe for BiCMOS Application

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Arash Salemi; [2011]
    Keywords : ;

    Abstract : There is an ambition of continuously decreasing thermal budget in CMOS and BiCMOS processing, thus low temperature epitaxy (LTE) (350-650°C) with chemical vapor deposition (CVD) technique in order to have faster process with low cost. One of the growth issues at low temperatures is gas quality where the oxygen and moisture contamination becomes critical for the epilayers quality. READ MORE

  4. 3. Design of Millimeter-wave SiGe Frequency Doubler and Output Buffer for Automotive Radar Applications

    University essay from Institutionen för systemteknik

    Author : Amjad Altaf; [2007]
    Keywords : Automotive Radar; VCO; Frequency Multiplier; SiGE; ACC; Millimeter-wave;

    Abstract : Automotive Radars have introduced various functions on automobiles for driver’s safety and comfort, as part of the Intelligent Transportation System (ITS) including Adaptive Cruise Control (ACC), collision warning or avoidance, blind spot surveillance and parking assistance. Although such radar systems with 24 GHz carrier frequency are already in use but due to some regulatory issues, recently a permanent band has been allocated at 77-81 GHz, allowing for long-term development of the radar service. READ MORE

  5. 4. Design of microwave low-noise amplifiers in a SiGe BiCMOS process

    University essay from Institutionen för systemteknik

    Author : Martin Hansson; [2003]
    Keywords : Electronics; LNA; low-noise; amplifiers; SiGe; BiCMOS; microwave; MMIC; RFIC; Elektronik;

    Abstract : In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. READ MORE

  6. 5. 2.4 GHz Power Amplifier with Cartesian Feedback for WLAN

    University essay from Institutionen för systemteknik

    Author : Maria Hofvendahl; [2002]
    Keywords : Electronics; Linearisation; Cartesian feedback; IMD; 1dBcompression point; PA; mixer; subtracter; adder; RF; Elektronik;

    Abstract : This final year project describes the linearisation method Cartesian feedback and the design of such a feedback with a 2.4GHz power amplifier. To investigate the functionality of the Cartesian feedback ideal blocks with no current consumption were made and then gradually analog circuits were introduced into the feedback. READ MORE