Essays about: "CMOS Front-End System"
Showing result 1 - 5 of 14 essays containing the words CMOS Front-End System.
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1. PLL for 5G mmWave
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This paper presents research and implementation of a high frequency Integer-N phase-locked loop for digital beamforming in mobile devices. Multiple topologies investigated whereof two were implemented. The transient phase noise of the PLL is -104dB/-95dB @1MHz. The output frequency range is from 8G-10G. READ MORE
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2. A Linear, Wide-band, Low-Power Receiver for Narrowband- Internet of Things (NB-IoT)
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Advancement of technology with the aid of new application, wireless communication has grown rapidly in the past two decades. Recently, in the wireless communication industry, Narrowband- Internet of Things (NB-IoT) is being discussed by everyone, as the most important emerging technology of the day. READ MORE
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3. Direct Conversion Front End for LTE and LTE-A with Frequency-Translational Feedback, Harmonic Rejection Mixer and Input Matching Compensation
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : This thesis covers the design of a wideband, flexible front end for LTE and LTE-A in a 65 nm CMOS process. A topology with global frequency translational feedback is investigated and a harmonic rejection mixer is implemented. READ MORE
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4. Analog Baseband Implementation of a Wideband Observation Receiver for RF Applications
University essay from Linköpings universitet/Elektroniska Kretsar och SystemAbstract : During the thesis, a two-staged analog baseband circuit incorporating a passive analog filter and a wideband voltage amplifier were successfully designed, implemented in an IC mask layout in a 65nm CMOS technology, and joined with a previously designed analog front-end design to form a wideband observation receiver. The baseband circuit is capable of receiving an IF bandwidth up to 990MHz produced by the analog front-end using low-side injection. READ MORE
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5. Measurement and Characterization of 28 nm FDSOI CMOS Test Circuits for an LTE Wireless Transceiver Front-End
University essay from Linköpings universitet/Elektroniska Kretsar och SystemAbstract : This master thesis was part of a project at the Acreo Swedish ICT AB to investigate the 28 nm FDSOI CMOS process technology for the LTE front-end application. The project has resulted in a chip that contains different test circuits such as power amplifier (PA), mixer, low noise amplifier (LNA), RF power switch, and a receiver front-end. READ MORE