Essays about: "CV-measurements"

Found 4 essays containing the word CV-measurements.

  1. 1. Development and 3D Printing of Intrinsically Stretchable Materials for Microsupercapacitors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Alexander Engman; [2020]
    Keywords : Stretchable electronics; Printed electronics; 3D printing; Direct Ink Writing; Additive manufacturing; Printed supercapacitor; Sträckbar elektronik; Tryckt elektronik; Friformsframställning; Direct InkWriting; Additiv tillverkning; Tryckt superkondensator;

    Abstract : The purpose of this thesis is to develop a simple Direct Ink Writing (DIW) method for fabricating intrinsically stretchable microsupercapacitors as ef- fective on-chip energy storage devices for the emerging stretchable electron- ics. Using the printing method for fabricating intrinsically stretchable elec- tronic components remains a novel approach. READ MORE

  3. 2. Fabrication and Charaterisation of Finger Gates

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Daniel Svedbrand; [2017]
    Keywords : Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Abstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE

  4. 3. Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells

    University essay from Uppsala universitet/Fasta tillståndets elektronik

    Author : Jonathan Joel; [2014]
    Keywords : CIGS; Surface Passivation; Thin Film Solar Cells; Al2O3; Capacitance-Voltage; Photoluminescence;

    Abstract : In this thesis, a novel method of reducing the rear surface recombination in copper indium gallium (di) selenide (CIGS) thin film solar cells, using atomic layer deposited (ALD) Al2O3, has been evaluated via qualitative opto-electrical characterization. The idea stems from the silicon (Si) industry, where rear surface passivation layers are used to boost the open-circuit voltage and, hence, the cell efficiency. READ MORE

  5. 4. A comparison of free carrier absorption and capacitance voltage methods for interface traps measurements

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Sethu Saveda Suvanam; [2011]
    Keywords : ;

    Abstract : This project aims at establishing a new method to characterize the interface between 4H-SiC and passivating dielectric layers. The investigations are made on metal-oxide-semiconductor (MOS) test structures. READ MORE