Essays about: "Capacitance-Voltage"
Showing result 1 - 5 of 10 essays containing the word Capacitance-Voltage.
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1. Device development for doping evaluation in nanowires using capacitance-voltage measurements
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : This thesis aims to show the prospect of capacitance measurements over nanowire arrays as an evaluation method of the p-doping level in weakly p-doped p-n nanowires. The premise of the method is that there will be a high yield of statistical data regarding the doping level of the nanowires. READ MORE
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2. InAs MOS capacitors;Fabrication & Characterization
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : The down scaling of metal-oxide-semiconductor based devices has been halted by the shortcomings of silicon. To enable further miniaturization new materials are required. The proposed replacements include compound III-V semiconductors and high-k oxides, the implementation of which has been difficult. READ MORE
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3. Influence of Na doping on tunnelling rear contact passivation in Cu(In,Ga)Se2 solar cells
University essay from Uppsala universitet/Fasta tillståndets elektronikAbstract : In this thesis Cu(In,Ga)Se2 (CIGS) solar cells with different sodiumdoping of the CIGS absorber and varying Al2O3 rear surface passivationlayer thickness have been manufactured and electrically characterised. Baseline samples and samples without passivation were used asreferences for the passivated samples. READ MORE
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4. Single Crystalline CVD Diamond Based Devices for Power Electronics Applications
University essay from Uppsala universitet/ElektricitetsläraAbstract : Chemical vapor deposited single-crystalline diamond has rare material properties such as thermal conductivity five times as high as copper, a wide band gap, a high breakdown field and high carrier mobilities. This makes it a very interesting material for high power, high frequency and high temperature applications. READ MORE
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5. Characterization of Al2O3 as CIGS surface passivation layer in high-efficiency CIGS solar cells
University essay from Uppsala universitet/Fasta tillståndets elektronikAbstract : In this thesis, a novel method of reducing the rear surface recombination in copper indium gallium (di) selenide (CIGS) thin film solar cells, using atomic layer deposited (ALD) Al2O3, has been evaluated via qualitative opto-electrical characterization. The idea stems from the silicon (Si) industry, where rear surface passivation layers are used to boost the open-circuit voltage and, hence, the cell efficiency. READ MORE