Essays about: "Defect Density"
Showing result 1 - 5 of 28 essays containing the words Defect Density.
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1. Flashlamp Annealing for Improved Ferroelectric Junctions
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE
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2. Mapping and treatment optimization attempt of monocalcium phosphate monohydrate (MCPM) in bioceramic implant production
University essay from Uppsala universitet/Tillämpad materialvetenskapAbstract : The in vitro production of ceramic implants used for cranial defect repair can be challenging and complex. In this thesis, a raw material in such a production has been mapped in order to optimize the production process. READ MORE
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3. Fabrication and Characterization of Quantum-well Field Effect Transistor
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE
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4. Symmetry Analysis of Orbitals in a Plane Wave Basis : A Study on Molecules and Defects in Solids
University essay from Linköpings universitet/Teoretisk FysikAbstract : Modeling and analysing materials with theoretical tools is of great use when finding new systems for applications, for example, semiconductors with point defects can be used for quantum applications, like single photon emitters. One important aspect to consider symmetry, which can yield useful information about the properties of a system. READ MORE
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5. Analysis of condition for ALD deposition of ferroelectric HZO
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Deposition of ferroelectric hafnium zirconium oxide (HZO) on semiconductor samples with Atomic Layer Deposition (ALD) has proven to be a viable method of production. But while the physical processes of ALD deposition is relatively well know, there exists some gaps in knowledge about different parameters for the ALD and the resulting depositions. READ MORE