Essays about: "Dielectric layer"

Showing result 1 - 5 of 29 essays containing the words Dielectric layer.

1. 1. Fabrication of sub-10 nm solid-state nanopores by electrical breakdown

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Kasumi Tsutsumi; [2023]
   Keywords : Nanopore fabrication; Solid-state material; Silicon nitride; Graphene; DNA translocation; Nanopor-avkänning; fast tillståndsmaterial; kiselnitrid; grafen; DNA-translokation;

   Abstract : Nanopore sensing is a versatile technique that employs very small openings, known as nanopores, to study biomolecules. The use of nanopores on solid-state membranes has gained attention due to its potential for low-cost and high-throughput sensing of single molecules in liquids. READ MORE

3. 2. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

   University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

   Author : Björn Landeke-Wilsmark; [2022]
   Keywords : Physics and Astronomy;

   Abstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE

4. 3. Investigation of Gallium Nitirde High Electron Mobility Transistors

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Shikhar Arvind; [2021]
   Keywords : Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

   Abstract : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. READ MORE

5. 4. Graphene-based Crack-Free Ceramic Coatings for High-Performance Passive RF Devices

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Haomin Liu; [2021]
   Keywords : ;

   Abstract : Dielectric resonators coated with highly conductive metallic layers are widely used in radio frequency (RF) applications. The quality factor (Q-factor) of resonators is a key figure-of-merit that describes the loss and the energy efficiency of the resonators. READ MORE

6. 5. Study of the Resistive Switching Mechanism in Novel Ultra-thin Organic-inorganic Dielectric-based RRAM through Electrical Observations

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Alba Maria Martinez Garcia; [2021]
   Keywords : Resistive random-access memory RRAM ; flexible electronics; organic-inorganic hybrid dielectric; dual-mode conducting filament; electrical programming; Resistivt slumpmässigt åtkomstminne RRAM ; flexibel elektronik; organisk-oorganisk hybrid dielektrikum; dubbelt läge ledande glödtråd; elektrisk programmering;

   Abstract : The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. READ MORE