Essays about: "Double MOSFET"

Showing result 1 - 5 of 6 essays containing the words Double MOSFET.

  1. 1. Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Elochukwu Mbah; [2023]
    Keywords : Silicon Carbide Power MOSFET; Gate Inductance; Gate Resistance; Miller Period; dv dt and di dt transients; Double Pulse Test; Kiselkarbid Power MOSFET; Gateinduktans; Gate Resistance; Millerperioden; dv dt och di dt transienter; Dubbelpulstest.;

    Abstract : Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. READ MORE

  3. 2. Investigation of switching power losses of SiC MOSFET : used in a DC/DC Buck converter

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : André Xavier Svensson; [2022]
    Keywords : Switching power losses; Metal Oxide Semiconductor Field Effect Transistor; Silicon carbide; Synchronous Buck converter; Wide Band Gap; Double Pulse Test; Efficiency; Temperature; Växlande effektförluster; Fälteffekttransistor; Kiselkarbid; Synchronous Buck omvandlare; Wide Band Gap; Double Pulse Test; Verkningsgrad; Temperatur;

    Abstract : All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem. READ MORE

  4. 3. E-Band SPDT RF Switch for a Class F PA in III-V Nanowire MOSFET Technology

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Rungeng Xu; [2022]
    Keywords : E-band; III-V Nanowire MOSFET; RF Switch; Class-F PA; Technology and Engineering;

    Abstract : This project designs an RF switch operating in E-band to provide a transmit path from a Class-F power amplifier (PA). The basic RF switch is based on the single-pole double-throw (SPDT) topology using shunt transistor switches and two λ/4 transmission line. READ MORE

  5. 4. Gate driver solutions for high power density SMPS using Silicon Carbide MOSFETs

    University essay from Mittuniversitetet/Institutionen för elektronikkonstruktion

    Author : Farhan Akram; [2021]
    Keywords : SiC MOSFETs; Gate drivers; DC-DC converter; High power and efficiency power supplies;

    Abstract : Discrete silicon carbide (SiC) power devices have unique characteristics that outpace those of silicon (Si) counterparts. The improved physical features have provided better faster switching, greater current densities, lower on-resistance, and temperature performances. READ MORE

  6. 5. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Marcus Sandberg; [2020]
    Keywords : III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Abstract : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. READ MORE