Essays about: "Electrical resistance"
Showing result 1 - 5 of 117 essays containing the words Electrical resistance.
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1. Measuring bacterial metabolism and antibioticsusceptibility : using silicon nanowire field-effect transistor.
University essay from Uppsala universitet/Fasta tillståndets elektronikAbstract : Antimicrobial resistance is considered by many prominent researcher and scientist as a profound global health crisis that us humans must face in the next decade. It is threatening the effectiveness of these once-reliable weapons against bacterial infections and leaving us susceptible to pathogenic agents. READ MORE
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2. AC Gate Bias Stress of 4H-SiC MOSFETs : An investigation into threshold voltage instability of SiC Power MOSFETs under the influence of bipolar gate stress
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Silicon Carbide, a wide band gap (WBG) semiconductor, has pushed electrical limits beyond Silicon (Si) when it comes to power electronics. It has offered the electrification of society showing promise for a greener future. READ MORE
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3. Tribological characterization of a ball bearing subjected to an electric field : Electric drivetrain tribology
University essay from Luleå tekniska universitet/Institutionen för teknikvetenskap och matematikAbstract : Electric machines are widely used in for instance the automotive industry in electric vehicles and in wind turbines. The electrical machines have mechanical bearings as an integral part used to transmit power and load. In addition, the main function includes reducing friction between interacting surfaces. READ MORE
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4. Digitally Controlled Oscillator Topologies for mm-Wave Pulsed Coherent Radar
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The advancement of future generations of wireless communication and radar sensing warrants the need for mm-wave digitally controlled oscillators (DCOs) with high-frequency trade-offs in consideration. The purpose of this project is to investigate DCO topologies inspired from scientific literature. READ MORE
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5. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications
University essay from KTH/Tillämpad fysikAbstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE