Essays about: "Ferroelectric memory"
Showing result 1 - 5 of 10 essays containing the words Ferroelectric memory.
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1. Structural analysis of HZO thin film and electrode using X-ray diffraction
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE
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2. Evaluation of Ferroelectric Tunnel Junction memristor for in-memory computation in real world use cases
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Machine learning algorithms are experiencing unprecedented attention, but their inherent computational complexity leads to high energy consumption. However, a paradigm shift in computing methods has the potential to address the issue. READ MORE
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3. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. READ MORE
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4. Laminated HZO on InAs: A study of as-deposited ferroelectricity
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE
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5. Simulations of current transport phenomena in ferroelectric tunnel junctions
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Ferroelectric memories pose as a potential candidate as resistive memory devices that could be used for in-memory computing and artificial synapses. One promising type of ferroelectric memory device is the ferroelectric tunnel junction (FTJ). READ MORE