Essays about: "Field Effect Transistors"
Showing result 1 - 5 of 37 essays containing the words Field Effect Transistors.
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1. Design and Modeling of InxGa(1−x)As/InP based Nanosheet Field Effect Transistors for High Frequency Applications
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The advancement of CMOS technology has been fueled by the need to satisfy Moore’s law by shrinking transistors to progressively smaller sizes and increasing the transistor density per unit area [1]. The dimension of the state-of-the-art MOSFET is now down to a few nanometers. READ MORE
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2. Flashlamp Annealing for Improved Ferroelectric Junctions
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE
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3. Development of thick GaN and AlGaN drift layers for vertical power devices
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-generation highly efficient vertical power devices for a smart grid applications and electrification of mobility. Achieving desirable material properties, such as low background impurity concentrations and reduced dislocation densities in combination with high growth rates, necessary for practical application present a challenge. READ MORE
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4. Characterization of Bi-incorporated InSb(111)A/B Surfaces : An STM and XPS Study
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : In recent years, III-V semiconductor materials have received increasing attention due to their admirable electronic properties like direct tunable bandgaps and high charge carrier mobility. Indium Antimonide (InSb) possesses the largest electron mobility among III-V materials and is promising for infrared detectors, high-speed field effect transistors, and spintronics. READ MORE
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5. Convolutional-LSTM for IGBTs Prognostics and Age Monitoring : Designing a neural network for predicting aging precursors in power devices
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : In recent years, extensive research efforts have been dedicated to the field of prognostics and age-related degradation, with major focus on higher complexity devices. However, relatively little attention has been given to power devices, such as Insulated Bipolar Gate Transistors (IGBTs), despite their critical role in high power electronic applications. READ MORE
