Essays about: "GaAs nanowires"

Showing result 1 - 5 of 13 essays containing the words GaAs nanowires.

1. 1. In-situ Growth of Sn-seeded GaAs and GaSb Nanowire Heterostructures

   University essay from Lunds universitet/Centrum för analys och syntes

   Author : Azemina Kraina; [2023]
   Keywords : nanowire; heterostructure; ETEM; MOCVD; TEM; in-situ; Sn; GaAs; GaSb; materials chemistry; Technology and Engineering; Chemistry;

   Abstract : One of the ways to utilize III-V nanowires, is to make use of the possibility to combine materials and create heterostructures which allows for creating material combinations with new properties. A special interest can be taken into Sb-containing nanowires due to the high electron mobility, however there has been reported difficulties with switching to other materials because of a 'memory effect' where Sb lingers in the system and nanowire. READ MORE

3. 2. Aerotaxy-grown GaAs nanowires using Ga seed particles

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Eric Ceccarelli; [2021]
   Keywords : Aerotaxy; GaAs nanowires; epitaxy; self-catalized growth; self-seeded growth; Ga seeded GaAs nanowires; Ga seeded GaP nanowires; Technology and Engineering;

   Abstract : Aerotaxy offers an alternative method for the manufacturing of semiconductor nanowires. Instead of seeding growth on an expensive substrate, aerosol seed particles act as the catalyst for the Vapor–Liquid–Solid growth in a hot flow through reactor. READ MORE

4. 3. An STM-based study of Bi deposition on InAs(110)

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Tobias Alpskog; [2020]
   Keywords : Bismuth; Deposition; STM; Physics and Astronomy;

   Abstract : III-V semiconductor compounds containing Bi, such as InBi, have recently attracted much attention due to predictions of band inversion and topological insulators. The predictions showed that films of InBi could be applicable in quantum computers and at room temperature. READ MORE

5. 4. Passivation of Gallium Arsenide Nanowires for Solar Cells

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Austin Irish; [2019]
   Keywords : nanowires; semiconductors; solar cells; photovoltaics; passivation; electronics; chemistry; polymers; hydrazine; plasma; gallium; arsenic; iii-v; epitaxy; photoluminescence; time-resolved; spectroscopy; Physics and Astronomy;

   Abstract : A strategic and diverse set of passivation methods for gallium arsenide nanowires wasstudied. Using a time-resolved photoluminescence setup at100 Kand300 K, the radiativerecombination of charge carriers was resolved on a picosecond time scale. READ MORE

6. 5. I-V and Optical Characterization of InP/InAsP Quantum Disc-in-Nanowire Infrared Photodetectors

   University essay from Högskolan i Halmstad/Akademin för informationsteknologi

   Author : Divya Raval; [2019]
   Keywords : Nanowires; Infrared photodetectors; Quantum disc; Photocurrent;

   Abstract : Photodetectors are semiconductor devices capable of converting optical signals into electrical signals. There is a wide range of applications for photodetectors such as fiber optics communication, infrared heat camera sensors, as well as in medical and military equipment. READ MORE