Essays about: "GaN AlGaN"

Found 4 essays containing the words GaN AlGaN.

  1. 1. Study of ohmic contact formation on AlGaN/GaN heterostructures

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Kai-Hsin Wen; [2019]
    Keywords : ohmic contacts; wide bandgap; Ta-based; recess etch; N-vacancies;

    Abstract : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. READ MORE

  2. 2. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Hsin-Yu Chen; [2018]
    Keywords : selective area growth; MOCVD; AlGaN pyramid; GaN multiple quantum wells; undesired deposition;

    Abstract :   Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement. READ MORE

  3. 3. Fabrication and Optical Properties of ZnO Nanocrystal/GaN Quantum Well Based Hybrid Structures

    University essay from Linköpings universitet/Linköpings universitet/TunnfilmsfysikTekniska högskolan

    Author : Kuo Chieh-Yi; [2012]
    Keywords : ZnO; GaN; Hybrid Structure;

    Abstract : Optical properties of hybrid structures based on zinc oxide nanocrystals (NCs) and Gallium Nitride quantum well (QW) has been studied. The ZnO NCs thin films on the top of GaN QW structures were fabricated using spin coating. The surface morphology was characterized by scanning electron microscopy (SEM). READ MORE

  4. 4. Characterization of AlGaN HEMT structures

    University essay from Linköpings universitet/Institutionen för fysik, kemi och biologi

    Author : Anders Lundskog; [2007]
    Keywords : HEMT; Hot-Wall MOCVD; GaN; AlGaN; AlN exclusionlayer; Double heterojunction; 1D Poisson-Schrödinger;

    Abstract : During the last decade, AlGaN High Electron Mobility Transistors (HEMTs) have been intensively studied because their fundamental electrical properties make them attractive for highpower microwave device applications. Despite much progress, AlGaN HEMTs are far from fully understood and judged by the number of published papers the understanding of advanced structures is even poorer. READ MORE