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Showing result 1 - 5 of 6 essays matching the above criteria.

  1. 1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Ivan Krsic; [2023]
    Keywords : HEMT; GaN; off-state stress; memory effects; drain leakage current; dynamic RDSon; threshold voltage instabilities; charge redistribution; HEMT; GaN; stress i avslaget tillstånd; minneseffekter; läckströmmen; dynamisk RDSon; instabiliteten hos styrets tröskelspänning; omfördelningen av laddningar;

    Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE

  3. 2. Development of thick GaN and AlGaN drift layers for vertical power devices

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Andri Dhora; [2023]
    Keywords : Technology and Engineering;

    Abstract : High-quality, thick III-nitride epitaxial drift layers with controlled doping are needed for next-generation highly efficient vertical power devices for a smart grid applications and electrification of mobility. Achieving desirable material properties, such as low background impurity concentrations and reduced dislocation densities in combination with high growth rates, necessary for practical application present a challenge. READ MORE

  4. 3. Study of ohmic contact formation on AlGaN/GaN heterostructures

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Kai-Hsin Wen; [2019]
    Keywords : ohmic contacts; wide bandgap; Ta-based; recess etch; N-vacancies;

    Abstract : It is challenging to achieve low-resistive ohmic contacts to III-nitride semiconductors due to their wide bandgap. A common way to reduce the contact resistance is to recess the ohmic area prior to metallization. READ MORE

  5. 4. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Hsin-Yu Chen; [2018]
    Keywords : selective area growth; MOCVD; AlGaN pyramid; GaN multiple quantum wells; undesired deposition;

    Abstract :   Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement. READ MORE

  6. 5. Fabrication and Optical Properties of ZnO Nanocrystal/GaN Quantum Well Based Hybrid Structures

    University essay from Tunnfilmsfysik; Tekniska högskolan

    Author : Kuo Chieh-Yi; [2012]
    Keywords : ZnO; GaN; Hybrid Structure;

    Abstract : Optical properties of hybrid structures based on zinc oxide nanocrystals (NCs) and Gallium Nitride quantum well (QW) has been studied. The ZnO NCs thin films on the top of GaN QW structures were fabricated using spin coating. The surface morphology was characterized by scanning electron microscopy (SEM). READ MORE