Essays about: "Gallium Nitride GaN"

Showing result 1 - 5 of 16 essays containing the words Gallium Nitride GaN.

  1. 1. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications

    University essay from KTH/Tillämpad fysik

    Author : Wilhelm Holmberg; [2023]
    Keywords : High Electron Mobility Transistor; HEMT; Gallium Nitride; GaN; Silicon Carbide; SiC; Proton Radiation; Galliumnitrid; GaN; Kiselkarbid; SiC; Kisel; Si; HEMT; Transistor; Protonstrålning;

    Abstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE

  3. 2. Analysis of high-voltage low-current DC/DC converters for electrohydrodynamic pumps

    University essay from Uppsala universitet/Institutionen för elektroteknik

    Author : Sigge Axelsson; Jonas Gartner; Axel Stafström; [2023]
    Keywords : high-voltage; low-current; low-power; DC DC; DC-DC; high-gain; converter; electrohydrodynamic pump; EHD; transformerless converter; Royer-based converter; resonant Royer oscillator; Cockroft-Walton voltage multiplier; CWVM; voltage multiplier; series-connected positive-negative voltage multiplier; SPNVM; planar air-core transformer; planar transformer; high-freqency Royer-based converter; overcurrent protection; LT8331; gallium nitride; GaN; planar PCB-integrated transformers;

    Abstract : Moving parts cause vibrations and tend to wear out. In applications where maintenance is complicated, solutions without moving parts are therefore advantageous. Electrohydrodynamic pumps are such a solution. Instead of mechanical propulsion, they use strong electric fields to induce movement in a dielectric cooling liquid. READ MORE

  4. 3. Investigation of Gallium Nitirde High Electron Mobility Transistors

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Shikhar Arvind; [2021]
    Keywords : Gallium Nitride; High electron mobility transistor; leakage current; in-situ Silicon Nitride; power electronics;

    Abstract : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. READ MORE

  5. 4. Radiation effects on wide bandgap semiconductor devices

    University essay from KTH/Tillämpad fysik

    Author : Patric Elf; [2020]
    Keywords : applied physics;

    Abstract : Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e. READ MORE

  6. 5. Characterization of GaNbased HEMTs for power electronics

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Xiaomin Liang; [2020]
    Keywords : Gallium nitride; high electron mobility transistor; gate designs; power electronics;

    Abstract : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. READ MORE