Essays about: "Gallium nitride"

Showing result 1 - 5 of 17 essays containing the words Gallium nitride.

  1. 1. Radiation effects on wide bandgap semiconductor devices

    University essay from KTH/Tillämpad fysik

    Author : Patric Elf; [2020]
    Keywords : applied physics;

    Abstract : Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e. READ MORE

  2. 2. Reduction of iron oxide by hydrogen studied using environmental transmission electron microscopy

    University essay from Lunds universitet/Centrum för analys och syntes

    Author : David Wahlqvist; [2020]
    Keywords : Transmission Electron Microscopy; Electron Diffraction; Iron Oxide; Reduction; Iron; Environmental Transmission Electron Microscopy; ETEM; Materials chemistry; Materialkemi; Chemistry;

    Abstract : This thesis aims to explore how the reduction of iron oxide by hydrogen should be explored in an environmental transmission electron microscope (ETEM). This is done by performing a series of reduction attempts in the ETEM at nCHREM, Lund University, and exploring how the ETEM conditions are different from those used commercially. READ MORE

  3. 3. Characterization of GaNbased HEMTs for power electronics

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Xiaomin Liang; [2020]
    Keywords : Gallium nitride; high electron mobility transistor; gate designs; power electronics;

    Abstract : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. READ MORE

  4. 4. Investigating Optical-Field-Induced Currents in GaN using Ultrafast Lasers

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Vidar Flodgren; [2019]
    Keywords : GaN; gallium nitride; nanoscience; material science; ultrafast lasers; Yb Laser; Pharos Laser; titanium sapphire laser; device fabrication; lift-off; gold etching; optical-field-induced currents; modelling; matlab; Physics and Astronomy;

    Abstract : This study saw the development of an experimental setup capable of generating and measuring optical-field-induced currents in a variety of nanodevices fabricated specifically for this project. Each device design features two metallic contacts, closely separated by about 5 micrometers, deposited onto a semiconductor or insulator substrate. READ MORE

  5. 5. Black-box optimization of simulated light extraction efficiency from quantum dots in pyramidal gallium nitride structures

    University essay from Linköpings universitet/Matematiska institutionen

    Author : Karl-Johan Olofsson; [2019]
    Keywords : Black-box optimization; Radial basis functions; Gallium nitride; light extraction efficiency; FDTD; surrogate functions; semiconductors; global optimization;

    Abstract : Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). READ MORE