Essays about: "Gallium nitride"

Showing result 16 - 20 of 20 essays containing the words Gallium nitride.

  1. 16. Linearity Aspects of Dynamic PA Supply-Modulation Systems with Emphasis on Modulator Modeling and non-linearities

    University essay from Avdelningen för elektronik, matematik och naturvetenskap

    Author : Robert Glen Perea Tamayo; [2012]
    Keywords : EER; Envelope tracking; hybrid switching amplifiers; power amplifiers supply modulation;

    Abstract : Modern communication systems operate with high peak-to-average-power ratio (PAPR) over wide bandwidth. Linearity requirements force operation in a low efficient highly linear back-off region. Then increasing efficiency is becoming critical. One of the most promising technologies to accomplish this is using supply modulation, e. READ MORE

  3. 17. Fabrication and Optical Properties of ZnO Nanocrystal/GaN Quantum Well Based Hybrid Structures

    University essay from Tunnfilmsfysik; Tekniska högskolan

    Author : Kuo Chieh-Yi; [2012]
    Keywords : ZnO; GaN; Hybrid Structure;

    Abstract : Optical properties of hybrid structures based on zinc oxide nanocrystals (NCs) and Gallium Nitride quantum well (QW) has been studied. The ZnO NCs thin films on the top of GaN QW structures were fabricated using spin coating. The surface morphology was characterized by scanning electron microscopy (SEM). READ MORE

  4. 18. Design and Implementation of as Asymmetric Doherty Power Amplifier at 2.65 GHz in GaN HEMT Technology

    University essay from Elektroniska komponenter; Tekniska högskolan

    Author : Mohsin Mumtaz Tarar; [2011]
    Keywords : Asymmetric Doherty Power amplifier;

    Abstract : Power amplifiers are an indispensible part of the wireless communication systems. Conventional PAs provide peak efficiency at peak output power which is obtained at a certain fixed optimum resistance. These kind of amplifiers are normally called switched-mode power amplifiers (SMPAs) and are used for constant envelope signals. READ MORE

  5. 19. Simulation of cubic GaN growth in SA MOVPE

    University essay from Institutionen för fysik, kemi och biologi

    Author : Daniel Nilsson; [2009]
    Keywords : simulation; gallium nitride; SAG MOVPE; anisotropic;

    Abstract : In this work growth of cubic GaN in the selective area (SA) MOVPE process is simulated. The simulations are restricted to small pattern SA MOVPE growth. In this case the traditional MOVPE growth and the enhanced growth caused by surface diffusion are important growth factors. READ MORE

  6. 20. GaN HEMT and MMIC Design and Evaluation

    University essay from Institutionen för teknik och byggd miljö

    Author : Giorgi Aroshvili; [2008]
    Keywords : GaN; GaN HEMT; LoadPull;

    Abstract : Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high frequency transistors with lower power consumption in next-generation applications. Although the technology has been studied since early 1970s, there is still a vast room and expectations in its yet unachieved findings. READ MORE