Essays about: "Gallium nitride"

Showing result 6 - 10 of 20 essays containing the words Gallium nitride.

1. 6. Characterization of GaNbased HEMTs for power electronics

   University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

   Author : Xiaomin Liang; [2020]
   Keywords : Gallium nitride; high electron mobility transistor; gate designs; power electronics;

   Abstract : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. READ MORE

3. 7. Investigating Optical-Field-Induced Currents in GaN using Ultrafast Lasers

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Vidar Flodgren; [2019]
   Keywords : GaN; gallium nitride; nanoscience; material science; ultrafast lasers; Yb Laser; Pharos Laser; titanium sapphire laser; device fabrication; lift-off; gold etching; optical-field-induced currents; modelling; matlab; Physics and Astronomy;

   Abstract : This study saw the development of an experimental setup capable of generating and measuring optical-field-induced currents in a variety of nanodevices fabricated specifically for this project. Each device design features two metallic contacts, closely separated by about 5 micrometers, deposited onto a semiconductor or insulator substrate. READ MORE

4. 8. Black-box optimization of simulated light extraction efficiency from quantum dots in pyramidal gallium nitride structures

   University essay from Linköpings universitet/Matematiska institutionen

   Author : Karl-Johan Olofsson; [2019]
   Keywords : Black-box optimization; Radial basis functions; Gallium nitride; light extraction efficiency; FDTD; surrogate functions; semiconductors; global optimization;

   Abstract : Microsized hexagonal gallium nitride pyramids show promise as next generation Light Emitting Diodes (LEDs) due to certain quantum properties within the pyramids. One metric for evaluating the efficiency of a LED device is by studying its Light Extraction Efficiency (LEE). READ MORE

5. 9. Optimization of gas flow uniformity in enhancement of Metal Organic Chemical Vapor Deposition growth for III-nitrides

   University essay from Linköpings universitet/Halvledarmaterial

   Author : Kevin Olsson; [2019]
   Keywords : material science; mocvd; gan; semiconductors; gallium; nitride; fluid dynamics; termoelements; thermocouple; injector; heat transfer; thermal distribution; graphite; HEMT; III-nitrides; hot-wall MOCVD system; GaN-on-SiC; gas flow profile; laminar flow;

   Abstract : The thesis focuses on the gas flow profile optimization of a non-conventional injector in a hot-wall MOCVD system. The injector’s gas flow profile is simulated with CFD and demonstrates awell-behaved laminar flow with a parabolic profile. READ MORE

6. 10. Using gallium nitride nanowires as STM probes

   University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

   Author : Karolis Sulinskas; [2018]
   Keywords : STM; STS; Nanowire; GaN; InAs; Semiconductors; Physics and Astronomy;

   Abstract : Gallium nitride (GaN) nanowires grown using catalyst-free metal organic vapor phase epitaxy were used as scanning tunneling microscope (STM) probes. The probes were prepared by placing a GaN nanowire on a tungsten STM probe using a nanomanipulator in a scanning electron microscope (SEM) and welding them together using an electron beam induced platinum deposition. READ MORE