Essays about: "Gallium"
Showing result 1 - 5 of 67 essays containing the word Gallium.
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1. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications
University essay from KTH/Tillämpad fysikAbstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE
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2. Analysis of high-voltage low-current DC/DC converters for electrohydrodynamic pumps
University essay from Uppsala universitet/Institutionen för elektroteknikAbstract : Moving parts cause vibrations and tend to wear out. In applications where maintenance is complicated, solutions without moving parts are therefore advantageous. Electrohydrodynamic pumps are such a solution. Instead of mechanical propulsion, they use strong electric fields to induce movement in a dielectric cooling liquid. READ MORE
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3. Sputtered Transparent Contact Layers for Bifacial and Tandem Solar Cells
University essay from Uppsala universitet/SolcellsteknikAbstract : A key to solar cells with lower environmental impact is higher efficiency and reduced material usages. Bifacial solar cells may have a higher efficiency as light can enter from two directions and tandem solar cells may use a larger part of the incoming solar spectrum, increasing the efficiency. READ MORE
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4. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE
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5. Investigation of Gallium Nitirde High Electron Mobility Transistors
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : Gallium Nitride (GaN) based transistors have been in the spotlight for power electronics due to promising properties like high bandgap, high breakdown field, high electron mobility, and high-frequency applications. While there are some commercial devices based on these transistors available, there is still room for improvement in these devices for widespread usage. READ MORE