Essays about: "HEMT"

Showing result 1 - 5 of 10 essays containing the word HEMT.

  1. 1. Radiation effects on wide bandgap semiconductor devices

    University essay from KTH/Tillämpad fysik

    Author : Patric Elf; [2020]
    Keywords : applied physics;

    Abstract : Gallium nitride (GaN) based high-electron-mobility transistors (HEMTs) are used in a wide variety of areas, such as 5G, automotive, aeronautics/astronautics and sensing elds ranging from chemical, mechanical, biological to optical applications. Owing superior material properties, the GaN based HEMTs are especially useful in harsh operation environments e. READ MORE

  2. 2. Characterization of GaNbased HEMTs for power electronics

    University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)

    Author : Xiaomin Liang; [2020]
    Keywords : Gallium nitride; high electron mobility transistor; gate designs; power electronics;

    Abstract : Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency compared to Si-based power devices. As known, the design of the HEMT has high impact on the performance of the devices. READ MORE

  3. 3. Optimization of gas flow uniformity in enhancement of Metal Organic Chemical Vapor Deposition growth for III-nitrides

    University essay from Linköpings universitet/Halvledarmaterial

    Author : Kevin Olsson; [2019]
    Keywords : material science; mocvd; gan; semiconductors; gallium; nitride; fluid dynamics; termoelements; thermocouple; injector; heat transfer; thermal distribution; graphite; HEMT; III-nitrides; hot-wall MOCVD system; GaN-on-SiC; gas flow profile; laminar flow;

    Abstract : The thesis focuses on the gas flow profile optimization of a non-conventional injector in a hot-wall MOCVD system. The injector’s gas flow profile is simulated with CFD and demonstrates awell-behaved laminar flow with a parabolic profile. READ MORE

  4. 4. Development of III-V RF Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Josefine Rost; Anna Wagnström; [2018]
    Keywords : Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Abstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE

  5. 5. Design of a Low-Noise Amplifier for Radar Application in the 5 GHz Frequency Band

    University essay from Högskolan i Gävle/Elektronik

    Author : Javier Alvaro Rivera Suaña; [2017]
    Keywords : ;

    Abstract : The purpose of this project was to design and manufacture a Low-Noise Amplifier (LNA) working at a 5 GHz frequency band, by using High Electron Mobility Transistor (HEMT) from Avago Technologies. To improve our design, it was necessary to build a two-stage amplifier; one stage to work in minimum noise sensitivity, and another stage to get the maximum gain achievable by the transistor. READ MORE