Essays about: "HRXRD"

Found 5 essays containing the word HRXRD.

  1. 1. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    University essay from KTH/Tillämpad fysik

    Author : Elaheh Aghajafari; [2023]
    Keywords : III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Abstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE

  3. 2. Properties of III-V semiconductor materials grown by HVPE

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Stamoulis Stergiakis; [2016]
    Keywords : ;

    Abstract : This thesis focuses on the characterization of lll-V semiconductor materials by using Scanning Electron Microscopy equipped with Energy Dispersive Spectroscopy (SEM-EDS), High Resolution X-ray Diffraction (HRXRD), Atomic Force Microscopy (AFM) and Photoluminescence (PL). In XRD characterization, the rocking curve measurement was conducted to evaluate the composition of III-V semiconductor alloys and the Reciprocal Lattice Mapping (RLM) revealed the detailed structural properties of heteroepitaxial III-V semiconductors. READ MORE

  4. 3. Characterization of SiGe layers grown by Trisilane and Germane at low temperatures for BiCMOS application

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Carmine Cappetta; [2014]
    Keywords : ;

    Abstract : Low temperature epitaxy (LTE) of SiGe by chemical vapor deposition (CVD) has attracted dramatic attention during the last decade for CMOS and BiCMOS application. LTE relates to a temperature range of 350÷650 °C. READ MORE

  5. 4. Structural and optical characterization of Si/Ge quantum dots

    University essay from Institutionen för fysik, kemi och biologi

    Author : Dan Wigblad; [2008]
    Keywords : quantum dot; IR detector; bolometer; semiconductor; germanium; silicon;

    Abstract : In this study silicon-germanium quantum dots grown on silicon have been investigated. The aim of the work was to find quantum dots suitable for use as a thermistor material. The quantum dots were produced at KTH, Stockholm, using a RPCVD reactor that is designed for industrial production. READ MORE

  6. 5. Growth of GaN on lattice matched AlInN substrates

    University essay from Institutionen för fysik, kemi och biologi

    Author : Muhammad Boota; Reem Rahmatalla; [2008]
    Keywords : ;

    Abstract : This project was planed in order to study the effect of growth and crystalline quality of GaN on lattice matched Al1-xInxN seed layer. The GaN lattice matched Al0.81Ino. READ MORE