Essays about: "HZO"

Showing result 1 - 5 of 7 essays containing the word HZO.

  1. 1. Structural analysis of HZO thin film and electrode using X-ray diffraction

    University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionen

    Author : Elliot Winsnes; [2024]
    Keywords : HZO; hafnia; hafnium dioxide; zirconium dioxide; ferroelectricity; ferroelectric; synchrotron radiation; X-ray diffraction; Physics and Astronomy;

    Abstract : Since its discovery in 2011, the ferroelectricity of thin films based on HfO2 has been studied intensively. In particular, thin films with a 1:1 ratio of HfO2 and ZrO2 (HZO) has been of great interest. The ferroelectricity arises from a non-centrosymmetric orthorhombic (o) phase of HZO whose prevalence is dependent on the processing conditions. READ MORE

  3. 2. Ru and RuO2 as bottom electrodes for HZO based FTJ’s

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Emil Gränsmark; [2023]
    Keywords : Technology and Engineering;

    Abstract : Vår hjärna löser beräkningar som tar oss genom livet otroligt energieffektivt; den kör hela dagen runt på ungefär 12 watt. Jämför man med en vanlig dator som kräver ungefär 175 watt så är det inte ens nära[2]. Att uppnå hjärnans energieffektivitet är ett ambitiöst mål för dagens elektronik. READ MORE

  4. 3. Flashlamp Annealing for Improved Ferroelectric Junctions

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Theodor Blom; [2023]
    Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

  5. 4. Semiconducting TiO2 for High Performance Ferroelectric Tunnel Junctions

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Erik Wikare; [2022]
    Keywords : Technology and Engineering;

    Abstract : The ferroelectric tunnel junction FTJ is a rather old concept but has recently been in the spotlight for its promising properties in computer memory technology and neuromorphic computing. The device consists of a ferroelectric insulator sandwiched between two electrodes, and by polarisation switching the resistance along the heterostructure can drastically be adjusted. READ MORE

  6. 5. Laminated HZO on InAs: A study of as-deposited ferroelectricity

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : André Andersen; [2022]
    Keywords : Ferroelectricity; HZO; InAs; III V; As-deposited ferroelectricity; BEOL; Nanoelectronics; Nanoprocessing; Nanotechnology; ALD; MOSCAP; Memory Technology; Technology and Engineering;

    Abstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE