Essays about: "High Electron Mobility Transistor"
Showing result 1 - 5 of 13 essays containing the words High Electron Mobility Transistor.
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1. Off-State Stress Effects in AlGaN/GaN HEMTs : Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate AlGaN/GaN HEMTs
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new technology which is prominent for high-speed and high-power applications. Some of the main problems with this technology were identified as dynamic RDSon, current collapse and threshold voltage instabilities due to the off-state stress. READ MORE
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2. Superconducting gates for InP HEMTs
University essay from KTH/Tillämpad fysikAbstract : The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryogenic Low Noise Amplifiers (LNAs), which have increasedin demand as quantum computing is scaling up. READ MORE
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3. Radiation Effects on GaN-based HEMTs for RF and Power Electronic Applications
University essay from KTH/Tillämpad fysikAbstract : GaN-HEMTs (Gallium Nitride-based High Electron Mobility Transistors) have, thanks to the large band gap of GaN, electrical properties that are suitable for applications of high electrical voltages, high currents, and fast switching. The large band gap also gives GaN-HEMTs a high resistance to radiation. READ MORE
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4. Fabrication and Characterization of Quantum-well Field Effect Transistor
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The project aims to optimize the design and fabrication of InGaAs quantum-well field-effect transistor (QW-FET) by investigating transfer and output characteristics of the QW-FET. This work found a lower source/drain contact resistance solution starting with fabricating micrometer-level gate length transistors. READ MORE
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5. Characterisation of GaN HEMTs on Different Substrates for Power Electronics Applications
University essay from KTH/Skolan för elektroteknik och datavetenskap (EECS)Abstract : GaN-based High Electron Mobility Transistors (HEMT) are appealing because of their large breakdown field, high saturation velocity, and superior thermal conductivity. They work at high temperature without much degradation. HEMTs have a few drawbacks despite many positives. The cost of developing GaN HEMTs on a native substrate is high. READ MORE