Essays about: "III-V Nanowire MOSFET"

Showing result 1 - 5 of 7 essays containing the words III-V Nanowire MOSFET.

  1. 1. III-V Nanowire MOSFETs for mm-Wave Switch Applications

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Marcus Sandberg; [2020]
    Keywords : III-V Nanowire MOSFET; millimeter wave mmW ; millimeter-wave integrated circuit MMIC ; single-pole double-throw SPDT ; Technology and Engineering;

    Abstract : RF-switches are key components in many electronic devices as they enable routing of higher frequency signals. Increasing demands on device performance requires new technologies as well as new approaches to designs of circuits. III-V nanowire MOSFETs are a promising device technology well suited for implementation of switches. READ MORE

  2. 2. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Azal Alothmani; [2018]
    Keywords : Nanowire transistor; 1-D MOSFET; RF performance; permittivity; parasitic capacitance; HSQ; COMSOL Multiphysics; Technology and Engineering;

    Abstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE

  3. 3. Development of III-V RF Nanowire MOSFETs

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Josefine Rost; Anna Wagnström; [2018]
    Keywords : Nanowire MOSFET; RF; COMSOL Multiphysics; Semiconductor processing; III-V Materials; Technology and Engineering;

    Abstract : The silicon MOSFET is one of the most important components used in modern electronics. The pursuit to continue fulfilling Moore’s law by scaling transistors to even smaller sizes have driven the development forward for CMOS technologies and new approaches have been necessary. READ MORE

  4. 4. Low-Frequency Noise in InGaAs Nanowire MOSFETs

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Christian Mario Möhle; [2017]
    Keywords : Physics and Astronomy;

    Abstract : Low-frequency (LF) noise (1/f as well as random telegraph-signal (RTS) noise) measurements were performed on high-performance InGaAs nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs). 1/f noise measurements at room temperature (RT) show that the dominant noise mechanism is carrier number fluctuations. READ MORE

  5. 5. Fabrication and Charaterisation of Finger Gates

    University essay from Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Daniel Svedbrand; [2017]
    Keywords : Transistor; MOSFET; NWFET; Nanowire; Finger gate; HSQ; InAs; InGaAs; III-V-material; buffer-layer; CV-characterisation; CV-measurements; Physics and Astronomy; Technology and Engineering;

    Abstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE