Essays about: "III-V Si solar cell"

Showing result 1 - 5 of 6 essays containing the words III-V Si solar cell.

  1. 1. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell

    University essay from KTH/Tillämpad fysik

    Author : Elaheh Aghajafari; [2023]
    Keywords : III-V semiconductor; GaAsxP1-x heteroeputaxy; hydride vapor phase epitaxy; III-V Si solar cell; III-V halvledare; GaAsxP1-x epitaxiallager; hydridångfasepitaxi; III-V Si solcell;

    Abstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE

  2. 2. Properties of epitaxial lateral overgrowth of GaAsP and GaAs grown by hydride vapor phase epitaxy

    University essay from KTH/Tillämpad fysik

    Author : Lakshman Srinivasan; [2020]
    Keywords : GaAsP; ELOG; HVPE; Photoluminescence; Raman;

    Abstract : Direct heteroepitaxy of III-Vs on silicon (Si) has always been a challenge and there are various strategies to integrate these materials. This thesis deals with one such strategy known as Epitaxial lateral overgrowth (ELOG) which is extensively supported by experiments. READ MORE

  3. 3. Properties of III-V/Si heterojunction fabricated by HVPE

    University essay from KTH/Tillämpad fysik

    Author : Prakhar Bhargava; [2020]
    Keywords : ;

    Abstract : Silicon is a promising material and is used for a wide range of applications in the electronics industry because of the high quality surface passivation given by the native oxide layer SiO2e. However, Si is not an ideal candidate for optoelectronic applications due to its indirect bandgap of 1. READ MORE

  4. 4. Correlated Structure-Property Investigation of Ultrathin InAs Nanowires

    University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

    Author : Linnea Suomenniemi; [2019]
    Keywords : Nanowires; InAs; epitaxy; MBE; Photo luminescence; Physics and Astronomy;

    Abstract : III-V semiconductors are a profound part of the optoelectronics industry and new developments in alloy compositions and architectures are constantly emerging. Lowdimensional semiconductors, such as nanowires (NWs) have shown to have improved characteristics in certain areas such as enhanced light absorption and can furthermore be integrated on Silicon (Si) plattforms and are thus predicted to be a key component in future nanoelectronic and nanophotonic applications and devices. READ MORE

  5. 5. Processing Technology for Si Based Tandem Solar Cells

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Nedim Aydinci; [2014]
    Keywords : ;

    Abstract : This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. READ MORE