Essays about: "III-V integration"
Showing result 1 - 5 of 11 essays containing the words III-V integration.
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1. Fabrication and characterization of GaAsxP1-x single junction solar cell on Si for III-V/Si tandem solar cell
University essay from KTH/Tillämpad fysikAbstract : Silicon based solar cells have been used as photovoltaic devices for decades due to reasonable cost and environment- friendly nature of silicon. But the conversion efficiency of silicon solar cell is limited; for instance, the maximum conversion efficiency of a crystalline silicon solar cell available in the market developed by Kaneka Corporation is 26 % [1]. READ MORE
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2. Flashlamp Annealing for Improved Ferroelectric Junctions
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE
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3. III-V semiconductor waveguides for application in nonlinear optics.
University essay from KTH/Tillämpad fysikAbstract : This thesis presents studies on III-V semiconductor waveguides with particular emphasis on second-order optical nonlinearity. The nonlinear processes that were investigated in this thesis are the Second Harmonic Generation (SHG) and the Spontaneous Parametric Down-Conversion (SPDC). READ MORE
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4. Laminated HZO on InAs: A study of as-deposited ferroelectricity
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : As the limits of transistor feature size scaling is reaching its saturation, new innovations are needed to prevent performance loss. High performance transistors on the III/V semiconductor platform implemented with ferroelectric oxides might in the future satisfy this demand. READ MORE
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5. Capacitance Optimization and Ballistic Modeling of Nanowire Transistors
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : Downscaling of Si-based metal-oxide-semiconductor field-effect transistors (MOSFETs) has contributed to increased microchip device density and to improve the functionality of the electronic circuits. The dimensions of state of art MOSFET is down to a few nanometers. It has been demonstrated that smaller MOSFETs are faster and more energy-efficient. READ MORE