Essays about: "III-V-material"
Found 5 essays containing the word III-V-material.
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1. The STM Study of Bi Adsorption on the InAs(111)B Surface
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Semiconductors composed of group III and group V elements have a variety of promising applications, such as topological insulators and quantum computers. Among this category of semiconductors, bismuth (Bi)-containing III-V compounds are able to make these applications possible. READ MORE
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2. Fabrication and Charaterisation of Finger Gates
University essay from Lunds universitet/Institutionen för elektro- och informationsteknikAbstract : In this thesis were vertical NWFETs (nanowire field-effect transistors) fabricated, and their electrical properties characterised. The main goal was to minimize the parasitic capacitances that limited the high frequency performance. The nanowires consisted of InAs/InGaAs heterojunctions, and were grown on top of Si via a buffer layer. READ MORE
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3. Simulation and TLM studies of vertical nanowire devices
University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionenAbstract : Vertical nanowire field effect transistors (NWFETs) have in this diploma work been studied in order to examine possible benefits of introducing a highly doped shell around the nanowire channel. It could be concluded that this new device geometry significantly enhances DC performance metrics. READ MORE
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4. Morphological Studies of Nanowire Surfaces Using Scanning Probe Techniques
University essay from Lunds universitet/Synkrotronljusfysik; Lunds universitet/Fysiska institutionenAbstract : Highly structured polytypic InAs III-V semiconductor nanowires with an axial stacking of wurtzite (WZ) and zincblende (ZB) segments were studied using scanning tunneling microscopy and spectroscopy (STM/S). The periodic changes in the axial direction of the crystal structure were achieved by precisely tuning the growth parameters, and no unwanted doping gradient was required. READ MORE
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5. Characterization of doped GaInP nanowires for photovoltaics
University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysikAbstract : The interest in renewable energy sources has increased recently, which has resulted in increasing research in solar energy as an environmentally friendly way to obtain electricity due to a rising energy consumption and an arising environmental awareness. Direct harvesting of solar energy to electricity is called photovoltaics, where III-V semiconductors nanowires can be used to fabricate multijunction solar cells with promise to deliver high efficiency at low cost. READ MORE