Essays about: "InAs"

Showing result 1 - 5 of 46 essays containing the word InAs.

  1. 1. Optical Communication using Nanowires and Molecular Memory Systems

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Synkrotronljusfysik

    Author : Thomas Kjellberg Jensen; [2024]
    Keywords : neuromorphic computing; nanowire; molecular dye; DASA photoswitch; OBIC; Physics and Astronomy;

    Abstract : Neuromorphic computational networks, inspired by biological neural networks, provide a possible way of lowering computational energy cost, while at the same time allowing for much more sophisticated devices capable of real-time inferences and learning. Since simulating artificial neural networks on conventional computers is particularly inefficient, the development of neuromorphic devices is strongly motivated as the reliance on AI-models increases. READ MORE

  3. 2. Operation and Area Restriction of Autonomous Wheel Loaders Using Colour Markings

    University essay from Mälardalens universitet/Akademin för innovation, design och teknik

    Author : Jonathan Fernkvist; Inas Hamzic; [2023]
    Keywords : Colour markings; Histogram; Line-following; Machine vision; Mapping; Wheel loader;

    Abstract : This thesis aims to create a system using colour markings for Volvo’s autonomous wheel loaders which determines their restricted area and operation using sensors available on the machine. The wheel loader shall be able to interpret and distinguish different colours of spray paint, and depending on the colour, act accordingly. READ MORE

  4. 3. Developing an Ar milling process to improve the contact quality to InAs nanowires

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

    Author : Chris Mkolongo; [2023]
    Keywords : InAs nanowires; Argon milling; Technology and Engineering;

    Abstract : The aim of this work was to develop a stable and reproducible argon milling process for InAs nanowires to remove the native oxide layer that increases electrical resistance. This was done by identifying a few milling parameters and studying them in relation to the milling rate of silicon dioxide (SiO2). READ MORE

  5. 4. Flashlamp Annealing for Improved Ferroelectric Junctions

    University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Institutionen för elektro- och informationsteknik

    Author : Theodor Blom; [2023]
    Keywords : Flashlamp annealing; ferroelectricity; hafnia oxide; III-V semiconductor; thermal annealing; device performance; Technology and Engineering;

    Abstract : The effects of flashlamp annealing (FLA) on the quality of ferroelectric HfxZr1–xO2 (HZO) interfaces, integrated on InAs substrates, are evaluated. For the integration of ferroelectric HZO on III-V semiconductors the crystallization via rapid thermal processing (RTP) can severely degrade the HZO/III-V interface. READ MORE

  6. 5. BCP Lithography Defined Arrays of InAs NWs Grown Using MOVPE with Au Seeds

    University essay from Lunds universitet/Lunds Tekniska Högskola; Lunds universitet/Fasta tillståndets fysik

    Author : Björn Landeke-Wilsmark; [2022]
    Keywords : Physics and Astronomy;

    Abstract : In this report we outline a detailed process flow for a quick and inexpensive implementation of large dense arrays of InAs nanowires (NWs) grown in the reactive ion etching/etched (RIE) pores of a SiO2/SiNx mask on top of an InAs/Si(111) substrate. The self-assembled (hexagonally close-packed) pattern of poly(methyl-methacrylate) (PMMA) cylinders in a poly(styrene) (PS) matrix adopted by a linear diblock poly(styrene-block-methyl-methacrylate) P(S-b-MMA) block-copolymer (BCP) was transferred to the dielectric stack (consisting of a ≈10 nm plasma enhanced chemical vapour deposition/deposited (PECVD) SiNX layer topped by a thin atomic layer deposition/deposited (ALD) SiO2 film) using a two-step RIE procedure. READ MORE