Essays about: "InGaN"

Showing result 1 - 5 of 6 essays containing the word InGaN.

1. 1. Fabrication and characterisation of RGB LEDs based on nanowire technology

   University essay from Lunds universitet/Fasta tillståndets fysik; Lunds universitet/Fysiska institutionen

   Author : Patrik Olausson; [2019]
   Keywords : RGB LEDs; InGaN; GaN; nitrides; platelets; nanotechnology; Technology and Engineering;

   Abstract : The white light LEDs of today are usually based on a blue LED and a phosphor, converting the blue light to longer wavelengths. While these phosphor-converted LEDs are extremely efficient compared to incandescent light or fluorescent light, there is still plenty of room for improvement. READ MORE

3. 2. Selective Area Growth of AlGaN pyramid with GaN Multiple Quantum Wells

   University essay from Linköpings universitet/Halvledarmaterial

   Author : Hsin-Yu Chen; [2018]
   Keywords : selective area growth; MOCVD; AlGaN pyramid; GaN multiple quantum wells; undesired deposition;

   Abstract :   Since Shuji Nakamura, Hiroshi Amano, and Isamu Akasaki won the 2014 Nobel prize in Physics owing to theircontributions on the invention of efficient blue GaN light emitting diodes, GaN became an even more appealingmaterial system in the research field of optoelectronics. On the other hand, quantum structures or low-dimensionalstructures with properties derived from quantum physics demonstrate superior and unique electrical and opticalproperties, providing a significant potential on novel optoelectronic applications based on the employment of quantumconfinement. READ MORE

4. 3. Band Structure Modelling of Strained Bulk and Quantum Dot III-Nitrides to Determine the Linear Polarization for Interband Recombinations

   University essay from Linköpings universitet/Institutionen för fysik, kemi och biologi

   Author : Joakim Andersson; [2018]
   Keywords : k.p theory; strain; III-nitrides; GaN; InN; bulk; quantum dot; nanostructures; linear polarization;

   Abstract : 8-band k.p theory was applied to bulk GaN and InN. The optical transitionintensity was computed and results show > 80-90% degree of polarization inthe direction of compression. Polarization switching is observed when strainwas reversed from compressive to tensile. READ MORE

5. 4. Improving green LEDs: A meta study into the causes and remedies of the green gap

   University essay from Lunds universitet/Fysiska institutionen; Lunds universitet/Fasta tillståndets fysik

   Author : Andreas Malmgren; [2015]
   Keywords : Light emitting diodes; quantum wells; recombination rate; Technology and Engineering; Physics and Astronomy;

   Abstract : This literature review investigates and evaluates different strategies to improve InGaN-based light emitting diodes (LED) by analyzing published theoretical and experimental studies. The issues of non-uniform carrier distribution, piezoelectric polarization fields and poor wave function overlap can be mitigated by the use of InGaN barriers and substrates as well as staircase designs for quantum wells (QW). READ MORE

6. 5. Carrier Dynamics in InGaN/GaN Semipolar and Nonpolar Quantum Wells

   University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

   Author : Sherif Mohamed; [2013]
   Keywords : InGaN; piezoelectric fields; quantum confined stark effect; semipolar planes; nonpolar planes; photoluminescence; carrier dynamics; carrier localization and polarized emission.;

   Abstract : InGaN based light emitting devices operating in the blue and near UV spectral regions are commercialized and used in many applications. InGaN heterostructures experience compositional inhomogeneity and thus potential fluctuations, such that regions of higher indium composition are formed and correspond to lower potentials. READ MORE