Essays about: "LDMOS"
Showing result 1 - 5 of 8 essays containing the word LDMOS.
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1. 1kW Class-E solid state power amplifier for cyclotron RF-source
University essay from Uppsala universitet/FREIAAbstract : This thesis discusses the design, construction and testing of a highefficiency, 100 MHz, 1 kW, Class-E solid state power amplifier. The design was performed with the aid of computer simulations using electronic design software (ADS). The amplifier was constructed around Ampleon's BLF188XR LDMOS transistor in a single ended design. READ MORE
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2. RF High Power Amplifiers for FREIA – ESS : design, fabrication and measurements
University essay from Uppsala universitet/Institutionen för fysik och astronomiAbstract : The FREIA laboratory is a Facility for REsearch Instrumentation and Acceleratior development at Uppsala University, Sweden, constructed recently to test and develop superconducting accelerating cavities and their high power RF sources. FREIA's activity target initially the European Spallation Source (ESS) requirements for testing spoke cavities and RF power stations, typically 400 kW per cavity. READ MORE
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3. Development of a wideband high power amplifier for cancer treatment.
University essay from Avdelningen för elektronik, matematik och naturvetenskapAbstract : Medical hyperthermia refers to heating of tumors to temperature levels which are lethal to the cells for sufficient periods of time or rendering the cancerous cells more sensitive to ionizing radiation or chemotherapy. In order to increase the temperature in cancerous tissues, high power solid state microwave amplifiers need to be used. READ MORE
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4. A Study of Different Switched Mode Power Amplifiers for the Burst Mode Operation
University essay from Institutionen för teknik och byggd miljöAbstract : Power-amplifier efficiency is a significant issue for the overall efficiency of most wireless system. Therefore, currently there are different kind of Switched mode power amplifiers are developed which are showing very high efficiency also at higher frequencies but all of these amplifiers are subjected to drive with the constant envelope signals. READ MORE
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5. Current Distribution in High RF Power Transistors
University essay from Ämnesavdelningen för elektronikAbstract : To obtain the power levels required from high RF power transistors, the size of the chip has often to be made so large that inductance of electrical connections inside the package cannot be neglected. This may have the effect that various parts of the transistor chip are not connected exactly parallel, i.e. READ MORE