Essays about: "Low Temperature Epitaxy Growth and Kinetic Modeling of SiGe for BiCMOS Application"

Found 1 essay containing the words Low Temperature Epitaxy Growth and Kinetic Modeling of SiGe for BiCMOS Application.

  1. 1. Low Temperature Epitaxy Growth and Kinetic Modeling of SiGe for BiCMOS Application

    University essay from KTH/Skolan för informations- och kommunikationsteknik (ICT)

    Author : Arash Salemi; [2011]
    Keywords : ;

    Abstract : There is an ambition of continuously decreasing thermal budget in CMOS and BiCMOS processing, thus low temperature epitaxy (LTE) (350-650°C) with chemical vapor deposition (CVD) technique in order to have faster process with low cost. One of the growth issues at low temperatures is gas quality where the oxygen and moisture contamination becomes critical for the epilayers quality. READ MORE